MRF6S27015NR1 MRF6S27015GNR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
10
18
1
0
64
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 28 Vdc
IDQ
= 160 mA
f = 2600 MHz
TC
= ?30
C
25C
85C
?30C
25C
85C
10
17
16
15
14
13
12
48
40
32
24
16
8
η
D
, DRAIN EFFICIENCY (%)
ηD
Gps
G
ps
, POWER GAIN (dB)
11
56
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
30
10
15
51510
20
25
11
13
VDD
= 24 V
28 V
32 V
IDQ
= 160 mA
f = 2600 MHz
EVM, ERROR VECTOR MAGNITUDE (%)
Figure 13. Drain Efficiency and Error Vector
Magnitude versus Output Power
0
0.5
Pout, OUTPUT POWER (dBm)
25
3
15
10
2.5
5
2
21 35 3622 23 25 26 27 2824 3429 30 3231
33
1.5
VDD= 28 Vdc, IDQ
= 160 mA
WiMAX, 802.16, 64 QAM 3/4, 4 Bursts
7 MHz Channel Bandwidth, f = 2600 MHz
ηD
η
D
, DRAIN EFFICIENCY (%)
20
1
EVM
14
12
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 14. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD
= 28 Vdc, P
out
= 3
W Avg., and ηD
= 22%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
108
107
106
110 130 150 170 190
MTTF (HOURS)
210 230
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